Evaluation of Gallium Nitride for Active Microwave Devices.
Abstract
At present we can routinely grow large, pure crystals of GaN, but because they are grown and processed under a non-equilibrium NH3 ambient instead of in N2, the maximum growth temperature is limited to 1050 deg. This induces a very high shallow donor density, as well as the precipitation of a second phase. While the latter might be improved by better control of growth parameters, the high carrier density necessitates processing at higher temperatures, where high pressure N2 must be used as the ambient. Furthermore, most normal semiconductor device processing steps can be accomplished only under such conditions. Hence the prime thrust of the efforts this past year has been in the design and assembly of such a high temperature-high pressure apparatus, and our efforts in CVD (NH3) crystal growth and characterization have been aimed at producing crystals appropriate for high temperature processing (annealing, diffusion, ion implantation and annealing, contacts, junctions).
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1976
- Accession Number
- ADA023142
Entities
People
- M. Gershenzon
Organizations
- University of Southern California