Glow Discharge Optical Spectroscopy for Measurement on Boron Implanted Distributions in Silicon.
Abstract
Ion implantation has become a common method for introducing impurities into semiconductors. The energy and amount of the impurities can be accurately measured during implantation. This affords a control and reproducibility which cannot be matched by standard diffusion techniques. The implanted atoms come to rest in the substrate with a certain distribution or profile. The impurity profile must be known to take full advantage of ion implantation. The profile is a complex function of impurity mass and energy, substrate, and crystal orientation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1976
- Accession Number
- ADA023441
Entities
People
- Gerald Twiggs Marcyk
Organizations
- University of Illinois Urbana–Champaign