Manufacturing Methods and Technology Engineering High Efficiency, High Power Gallium Arsenide Read-Type IMPATT Diodes.

Abstract

Procedures have been developed for the complete evaluation of gallium arsenide wafers beginning at wafer growth up to final evaluation of finished diodes fabricated from the wafers. The system allows traceability of final data back to the original location or site in the epitaxial reactor. Using the system, evaluation results are presented for wafers processed during the period. Some of the wafers processed exhibit good uniformity of characteristics. The first operating life test has been completed.

Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1975
Accession Number
ADA023913

Entities

People

  • H. R. Chalifour
  • S. R. Steele

Organizations

  • RTX

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diodes
  • Efficiency
  • Engineering
  • Gallium
  • Gallium Arsenides
  • Impatt Diodes
  • Life Tests
  • Manufacturing
  • Test And Evaluation

Readers

  • Aerospace Test and Evaluation
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems