Anisotropic Transport Effects in FETS.

Abstract

The project deals with investigations into charge transport and subbanding in semiconductor FET systems. It has been observed that the transport anisotropy diminishes with decreasing MOSFET inversion density. This is interpreted as a washing-out of the subband structure by the channel width modulating effects of the trapped surface charge and is quantitatively explained in terms of two conductivity contributions, one isotropic and one anisotropic. Subbanding in a J-FET system is treated. Several novel applications of subbanding systems are proposed.

Document Details

Document Type
Technical Report
Publication Date
May 01, 1976
Accession Number
ADA023917

Entities

People

  • Israel Ury
  • James W. Holm-kennedy

Organizations

  • University of California, Los Angeles

Tags

DTIC Thesaurus Topics

  • Anisotropy
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Conductivity
  • Electronics
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Inversion
  • Physical Properties
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds
  • Solid State Electronics
  • Transport Ships

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Phased Array Antenna Design.

Technology Areas

  • Microelectronics