Advanced Concepts of Microwave Generation and Control in Solids.
Abstract
This report describes the research accomplished during the fourth biannual period of a three year research program dealing with advanced concepts of microwave generation and control in solids. The emphasis of the program is to examine the optimum design and operation of microwave solid state devices for practical applications and to conduct related semiconductor material research. Work was conducted in the following areas: avalanche transit-time devices and related research; transferred electron devices and related research; and microwave field-effect transistors. The report contains a summary of the work accomplished during the half year period of research. The topics discussed are: GaAs Read Diodes; IMPATT Characteristics; Measurement of IMPATT Diode Amplifier Parameters; Computer Experiments on TRAPATT Circuits; High Power, High Efficiency CW TEO's Compound Semiconductor Transistor Study; Automated Measurement of FET S-Parameter; The Epitaxial Growth of Thin GaAs Layers; Read Structures; and Electric-Current-Controlled LPE Growth of GaAs. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1976
- Accession Number
- ADA023950
Entities
People
- Colin A. Lee
- G. C. Dalman
- J. Frey
- L. F. Eastman
Organizations
- Cornell University College of Engineering