Service for Device Surface Analysis.
Abstract
The primary scope of the program was the assessment of the total dose sensitivities of various devices (primarily MOS capacitors and bipolar transistors) as a function of oxide processing. In measuring the total dose damage, gain and leakage current measurements were used for the bipolar devices while quasi-static and 1 MHz C-V measurements were used for the MOS capacitors. The oxides studied were representative of bipolar technology and they were very sensitive to total dose (primarily in the creation of new interface states). Oxide processing dependence of the radiation response was strong for both the oxide charges and the interface states. Both the pre-existing oxide and the last oxidation step were instrumental in controlling the radiation response of the resulting oxide structure. Wet HCl oxidation increased the total dose sensitivity (primarily by increasing the charge accumulation, its effect on the interface states was inconsistent).
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 10, 1975
- Accession Number
- ADA024333
Entities
People
- Louis L. Sivo
- Robert B. Greegor
Organizations
- Boeing