Low Loss Low Hold Power Diode Phase Shifter Development.
Abstract
This report covers the design and test results on a Metal-Insulator-Semiconductor diode phase shifter operated at 3.5 GHz. The four bit phase shifter required less than 1 microamp of bias current in any phase shift state. The breadboard model was tested over a 5% bandwidth with 3.65 db of insertion loss, 100 mw of power handling capability, and 50 nanoseconds of switching rise time.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1976
- Accession Number
- ADA024779
Entities
People
- Leon L. Stevens