Survey of Radiation Effects in Metal-Insulator-Semiconductor Devices.
Abstract
This report reviews the effects of radiation on metal-insulator-semiconductor (MOS) devices. It briefly provides some of the background physics, chemistry, and analytical tools needed to discuss the MOS structures, and then reviews the effects of radiation on the characteristics of the devices. Most of the review concerns device fabrication and the processes that have been considered for improving radiation resistance of devices. Finally, the present status of the MOS technology is discussed, as well as remaining problems that must be solved to make the MOS technology applicable to radiation environments and to large-scale integration.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1975
- Accession Number
- ADA024809
Entities
People
- Arnold S. Epstein
- Harvey A. Eisen
Organizations
- Harry Diamond Laboratories