Damage Profiles in Silicon and Their Impact on Device Reliability. Part 2

Abstract

The report consists of two chapters. Chapter 1 discusses experimental and theoretical investigations of the growth kinetics of oxidation induced stacking faults. Theoretically, it is shown that growth of stacking faults can be described through condensation of silicon interstitials at the fault site during oxidation. Condensation of silicon interstitials is controlled through a tensile stress in the silicon surface generated during the formation of the SiO2 film on the silicon surface. Good agreement between experimental and calculated data for fault length and activation energy is obtained. Chapter 2 discusses the technique of Impact Sound Stressing (ISS).

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1976
Accession Number
ADA024826

Entities

People

  • G. H. Schwuttke

Organizations

  • International Business Machines Corporation (Armonk, NY)

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Computer Programs
  • Crystal Defects
  • Crystal Lattices
  • Crystal Structure
  • Electrical Properties
  • Electron Microscopy
  • Equations
  • Heat Of Activation
  • High Density
  • Ion Implantation
  • Manufacturing
  • Microscopy
  • Point Defects
  • Semiconductor Devices
  • Semiconductors
  • Statistical Analysis
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Business Analytics
  • Combustion science or combustion engineering.
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