Investigation of Electronic Transport, Recombination and Optical Properties in InAs sub 1-x P sub x Alloy Systems
Abstract
An experimental study has been made of the transport properties of InAs(1-x)P(x) grown epitaxially from the vapor phase onto semi-insulating GaAs substrates. The hydrogen carrier gas flow rate was varied for four sets of samples of InAs(0.61)P(0.39) with changing thickness between sets. A fifth set was investigated with varying composition. Resistivity and Hall effect measurements from 3K to 300K yielded electron mobilities as high as 13,100 sq cm/volt-sec at 77K and electron concentrations from 1.5 x 10 to the 16th power/ cc to 8 x 10 to the 16th power/cc at 300K. Transport at low temperatures (T<30K) is attributed to the formation of a donor impurity band. Optical transmission measurements and electron microprobe analyses were made on bulk InAs(1-x)P(x) samples of different compositions. Absorption coefficient as a function of wavelength near the fundamental absorption edge was deduced from transmission data. Energy band gap versus alloy composition was determined for these samples for 0 < or = x < or = 1. Surface photovoltage technique was employed to determine the hole diffusion length on three n-type InP specimens with (111) and (100) orientations. The measured hole diffusion length was found to be independent of the surface conditions.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1976
- Accession Number
- ADA025294
Entities
People
- Shengsan Li
Organizations
- University of Florida