Technology and Physics of Infrared and Point Contact Diodes
Abstract
Background work for this contract, performed by this laboratory, has shown that tunneling characteristics of junctions formed by a very thin dielectric layer sandwiched between two metals is independent of frequency (from DC through 10 micrometers wave length). Principal work done this period was on the optical response of Al-Al2O3-Al junctions. These demonstrated characteristic photoemission response with considerable bolometric effect. An analysis of the data showed that the model is consistent with experimental results and correctly predicts behavior at lower frequencies. Work was done on Al-Al2O3-Pb junctions in the far infrared at liquid nitrogen and liquid helium temperatures; equipment difficulties precluded obtaining new information. Three talks were given and three articles submitted for publication during this period.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1976
- Accession Number
- ADA025330
Entities
People
- Ali Javan
Organizations
- Massachusetts Institute of Technology