Reliability Evaluation of MNOS Arrays.
Abstract
The report describes the results of an investigation of MNOS device reliability. Two commercial device types were used as test vehicles in this study. Environmental and electrical stresses were used to accelerate failure and included high and low temperature operating life, high temperature storage, an 85C/85% relative humidity test and gamma radiation exposure. A wear out study was also performed. Nearly all the failures which did occur were attributable to processing flaws or failures usually associated with MOS technology in general.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1976
- Accession Number
- ADA025776
Entities
People
- M. A. Horne