Radiation and Charge Transport in SiO2.
Abstract
A parametric study of radiation-hard dry SiO2 processing has been performed using MOS capacitors to study the effect of various processing parameters on the hardness of dry oxides. Results of experiments have confirmed the radiation-induced flatband voltage shift is proportional to the oxide thickness squared as expected for high energy penetrating radiation. The use of vacuum ultraviolet irradiation and corona discharge have shown that the flatband voltage shift is directly proportional to thickness. These three measurements support a model in which hole traps are located very close to the Si-SiO2 interface and have a density which is independent of oxidation time for constant temperature. Variation of other parameters has shown that 1000C is the optimum oxidation temperature and 700 to 800C the optimum anneal temperature for hard oxides. The results of irradiation tests are shown to be dependent upon bias and strongly dependent upon dose rate and time of measurement due to charge relaxation. The presence of post-irradiation interface states and/or nonuniformities are shown to strongly affect the interpretation of flatband shift measurements.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1976
- Accession Number
- ADA025954
Entities
People
- G. W. Hughes
- R. J. Powell
Organizations
- RCA Corporation