Thin-Film Semiconductor Detectors for 10.6 micrometer Radiation.
Abstract
Thin-film semiconductor detectors were investigated for use as room temperature thermal detectors for infrared radiation at 10.6 micrometers. Some of the materials investigated were antimony trisulfide, germanium, tellurium, and selenium. The most successful devices were fabricated from 400 A bismuth, 6800 A selenium, and 1500 A gold on an alumina substrate. The method of operation was also studied and it was found that devices operating in the avalanche region of the Schottky diode formed between selenium and bismuth provided the best responsivity and frequency response. The responsivity of the device was measured as a function of the geometry and the modulation frequency. A comprehensive thermal analysis of thin-film thermal detectors has been made and a computer program written to calculate the responsivity of arbitrary devices. The analysis is completely general and is applicable to multilayered devices and diode as well as thermal change of resistance type of devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1975
- Accession Number
- ADA026266
Entities
People
- Jon C. Zimmerman
Organizations
- Air Force Institute of Technology