A Two-Dimensional Simulation of MESFETS.
Abstract
During the 1960's the bipolar junction transistor (BJT) was making steady progress in operating in the low GHz range as the active device in linear amplifier systems. Now the state-of-the-art junction field-effect transistor (JFET), in particular the metal semiconductor FET (MESFET), promises to supplant the BJT for microwave operation while utilizing its inherent majority carrier device noise advantage. Although the JFET was investigated by Shockley in 1952, its development lagged that of the BJT due to fabrication difficulties. Present performance of the JFET has improved due to the ability of present technology to produce well-defined, narrow-gate devices (0.5 micrometers at present), since JFET performance is limited mostly by gate length. Speculatively, operation of the GaAs MESFET will be pushed toward operation at 50 GHz or greater with significant gain to allow MESFET cascades to be used for large gain at microwave frequencies.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1976
- Accession Number
- ADA026413
Entities
People
- J. J. Barnes
Organizations
- University of Michigan