Electronic and Vibrational Properties of Solids under Hydrostatic Pressure.
Abstract
The pressure variation of the absorption edge and exciton levels in lamellar GaS and GaS has been measured up to 40 kilobars at 300 K. The pressure coefficient of the transition is - 11 + or - 1.5 x 10 to the minus 6th power eV/bar. A discussion of the values of the pressure coefficients for direct and indirect transitions in Gallium chalcogenides is given. Raman scattering on single phonon is also investigated and dispersion curves of Gallium chalcogenides under pressure are given. A phase transition in delta-GaSe under hydrostatic pressure is observed. The pressure dependence of impurity-induced vibrational modes in II-VI compounds is studied by means of Raman spectroscopy and as well as the luminescence of these compounds. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1976
- Accession Number
- ADA026511
Entities
People
- H. D. Fair
- J. M. Besson
- M. Zigone
- P. Jaszcyn-kopec
- R. Le Toullec
Organizations
- Pierre and Marie Curie University