Characterization of Insulating Regions Created in Silicon-on-Sapphire by Ion Implantation.

Abstract

This research program was concerned with the fabrication of isolation (electrically insulating) regions in silicon-on-sapphire (SOS) wafers for application to integrated circuit technology, radiation hard MOS IC's in particular.

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1975
Accession Number
ADA026517

Entities

People

  • Douglas M. Jamba
  • Eli Harari
  • Kenneth G. Aubuchon
  • Robert G. Wilson

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charged Particles
  • Circuits
  • Fabrication
  • Implantation
  • Integrated Circuits
  • Ion Implantation
  • Ions
  • Radiation
  • Sapphire

Fields of Study

  • Physics

Readers

  • Instructional Design and Training Evaluation.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene