Compounds and Properties of the Si-Al-O-N System.
Abstract
A product or quasi-equilibrium diagram for compounds formed in the system Si-Al-O-N at 1800 C in 1 atm N2 is presented. X-ray diffraction spectra for several new phases are given and the reaction and sintering processes are discussed. Data for the lattice expansion of the Beta-Si3N4 structure accompanying the incorporation of Al and O is presented, and used to calculate theoretical densities. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1976
- Accession Number
- ADA026520
Entities
People
- J. M. Wimmer
- N. S. Choudhury
- Peter L. Land
- R. W. Burns