III-V Surface Studies.
Abstract
A studies program has been carried out on the surfaces of III-V compounds with the purpose of understanding how their surface properties, structural, chemical, and electronic, relate to efficient photoemission. In particular, the development and characteristics of the negative electron affinity (NEA) surface, activated by the adsorption of cesium and oxygen, have been investigated. The materials studied were GaAs, Ga(X)In(1-x)As, InSb, InP, and AlAs; they were chosen to represent, as broadly and as feasibly as possible, the family of commonly used III-V semiconductors in terms of bandgap and constitutent atom size. For each of these materials, three primary crystallographic faces were studied, the (100), (111A), and (111B). The primary investigatory tools used were Low Energy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), Quadrupole Mass Analysis (QMA), photoemission measurements, and temperature. Most of the detailed characterization of the step-by-step development of the NEA surface was done on GaAs. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1975
- Accession Number
- ADA026710
Entities
People
- Bernard Goldstein
Organizations
- RCA Corporation