Enhancement of Absorbed Dose Following an Au-Si Interface for Incident Low-Energy X Radiation.
Abstract
It is shown that the presence of a thin surface layer of gold (or any high-Z material) enhances the absorbed dose in the active region of a silicon device subjected to low-energy x radiation by a large factor. For the cases of 50-keV, 100-keV, and 200-keV monoenergetic x-ray beams incident on silicon covered with 4 micrometers of gold, enhancement factors of 9.2, 17.4, and 6.7 at distances in the silicon of 1 micrometer, 3 micrometers and 8 micrometers respectively were obtained. Continuous blackbody radiation (kT = 10 keV and kT = 15 keV) hardened by the walls and device packaging of a model satellite gave rise to dose enhancement factors of 12.6 and 14.9 respectively in the first 3 micrometers of silicon. Dose-enhancement profiles are obtained for all the above cases, and in addition absolute absorbed dose profiles in silicon for the two hardened continuous spectra. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1976
- Accession Number
- ADA027039
Entities
People
- James B. Langworthy
- Mervine Rosen
Organizations
- United States Naval Research Laboratory