Advanced Electro-Optical System Hardening: Phase I--EMP/IEMP Susceptibility of HOST Sensor Electronic Components.
Abstract
This report presents the results of a study to determine the modes and mechanisms of semiconductor component degradation and failure resulting from submicrosecond electrical stress transients and ionizing nuclear radiation. The major area of investigation was the characterization of device degradation in the discrete bipolar and unipolar devices and microcircuits stressed with high current and voltage transients in the submicrosecond time regime. In order to accomplish this objective, an extensive program of experimental device modeling studies were performed. The experimental program consisted of a variety of EMP and combined-effects simulation experiments on the following device types: 1N821, 1N914, 1N3066, and LM113 diodes; 2N2484 and 2N2605 transistors; G118 MOSFET's, 2N4392 and 2N5434 JFET's; HA2605, LM101, and LM108 Operational Amplifiers; DG143, LM111, DM8800, SN54L00, and SN54L122 microcircuits. Approximately 300 devices were tested in this program. Tests were performed with square electric waveforms and ionizing radiation dose rates of 10 to the 10th power rads(Si)/s. Again testing has shown that microcircuits in general are more vulnerable than discrete components. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1975
- Accession Number
- ADA027136
Entities
People
- Leroy Harper
- William L. Vault
Organizations
- Harry Diamond Laboratories