Correlations of the 4.77 eV-4.28 eV Luminescence Band in Silicon Dioxide with the Oxygen Vacancy.
Abstract
A luminescence band observed at 4.77 eV (260 nm) in crystalline and at 4.28 eV (290 nm) in amorphous silicon dioxide has been found to correlate with optical and spin resonance measurements of oxygen vacancy concentrations in a series of irradiated samples. The 4.28 eV (290 nm) band has also been observed in the silicon dioxide layer of metal-oxide semiconductor (MOS) devices. The intensity of the bands can be increased by chemical reduction in carbon monoxide vapor or decreased by heating in oxygen or water vapor. The 4.28 eV (290 nm) luminescence intensity in the MOS samples also seems to be related to the trapped positive charge in the silicon dioxide. These facts all support a model for the liminescence center as being the oxygen vacancy. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 15, 1976
- Accession Number
- ADA027296
Entities
People
- Colin E. Jones
- David Embree
Organizations
- Lehigh University