Cooperative Electronic Transitions--Structural Transformations.

Abstract

Experimental and theoretical studies of the electronic properties and lattice instability of the A-15 crystal class of high temperature superconductors have been completed. Experimental investigation of the structural instability in V3Si single crystals, a prototype sample in this class, and accompanying theoretical formulation of the relevant electronic density of states N(E) has shown that the form of N(E) is very sensitive to electron lifetime. The addition of defects in the lattice causes important changes in N(E) and stabilizes the cubic phase lattice. A new band structure model has been developed for A-15 high temperature superconductors based on a group theoretical approach whose key features are in agreement with less accurate band structure calculations. Experiments demonstrate that the complications of spin-orbit coupling in the prototype A-15 compound V3Si can be neglected. Preliminary measurements of the thermal expansion in a number of crystals below 77K are complete, and the work is being extended to higher temperatures (approx 500K) to investigate the influence of a superlattice development first reported by Schmidt et al. at Bell Laboratories. Electrical resistivity studies reveal a common behavior for all technologically important A-15 materials, which we have interpreted as arising from interband electron-phonon scattering.

Document Details

Document Type
Technical Report
Publication Date
Jun 28, 1976
Accession Number
ADA027438

Entities

People

  • Samuel J. Williamson

Organizations

  • New York University

Tags

DTIC Thesaurus Topics

  • Band Structures
  • Buildings And Structures
  • Crystal Lattices
  • Crystals
  • Electrons
  • Energy Bands
  • High Temperature
  • High Temperature Superconductors
  • Instability
  • Materials
  • Prototypes
  • Quantum Properties
  • Single Crystals
  • Spin-Orbit Interaction
  • Superconductors
  • Thermal Expansion

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space