Gallium Arsenide Vertical Channel Insulated Gate Field-Effect Transistor.

Abstract

Basic studies of the various technologies relevant to the development of a power microwave vertical channel gallium arsenide insulated gate field-effect transistor have been carried out. The results indicate that while some technologies are in hand, a number of problems still exist in the areas of insulator stability and the n(+)-p-n(-)-n(+) profile formation. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 18, 1976
Accession Number
ADA027442

Entities

People

  • D. A. Tremere
  • M. C. Driver
  • T. M. S. Heng

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Dielectrics
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Elements
  • Field Effect Transistors
  • Gallium
  • Gallium Arsenides
  • Group 13 Elements
  • Metals
  • Microwaves
  • Post-Transition Metals
  • Semiconductor Devices
  • Transistors

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics