Radiation Effects in Semiconductor and Insulator Materials.
Abstract
The generation, recombination, trapping, and transport of carriers in the oxide (SiO2) of MOS devices has been investigated theoretically and experimentally. Calculated charge transfer and gate threshold shifts have been compared to experimental data for Shockley-Read, geminate, and columnar recombination. Columnar recombination agrees best with both low-energy electron and (60)Co irradiations. Time histories and total charge transfer were obtained for short pulses of 30-MeV electrons as a function of bias. The charge transfer versus bias differs significantly for two different sets of devices. The radiation and thermal depolarization of persistent internal fields created in polymer films by burn-in was studied. The data suggest that the creation of stable space-charge fields depends on (1) the existence of trapping sites associated with specific morphological features of each polymer or (2) on the alignment of molecular dipoles.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1976
- Accession Number
- ADA027779
Entities
People
- Donald P. Snowden
- Jason M. Wilkenfeld
- Roland E. Leadon