Radiation Effects on Oxides, Semiconductors, and Devices.
Abstract
Analytical and experimental studies of charge transport and charge buildup in aluminum-implanted SiO2 were performed which indicate that both electrons and holes are trapped in the implanted region. Results of an ionizing dose rate study for CMOS devices are presented in which the effects of two low dose rates (0.2 and 70 rads(Si)/sec) are compared. Charge transport studies on pedigreed MOS capacitors were made and results compared to those for similar devices. Detailed measurements of charge transport in radiation-hardened SiO2 films were performed as a function of temperature, applied electric field, and time following pulsed excitation. Determinations of SiO2 hole mobility were also made as a function of time, temperature, and field. An investigation of charge buildup at low temperatures in radiation-hardened MOS capacitors was performed and severe flatband voltage shifts were noted. Employment of ion-implanted oxides was observed to reduce this effect. A bibliography of published work on neutron-irradiated silicon is included.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1976
- Accession Number
- ADA028034
Entities
People
- Joseph. R. Srour
- Kuang Y. Chiu
- Orlie L. Curtis Jr.
- Siegfried Othmer