Theory of Bound States Associated with n-Type Inversion Layers on Silicon (001) Surfaces.

Abstract

Binding energies are calculated as functions of electric field for several electronic bound states of impurities localized at the interface between SiO2 and an n-type inversion layer on Si(001). The intensity of electron-dipole transitions and the effect of screening by free carriers are investigated.

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1976
Accession Number
ADA028098

Entities

People

  • B. G. Martin
  • Richard F. Wallis

Organizations

  • University of California, Irvine

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Electric Fields
  • Electrons
  • Impurities
  • Intensity
  • Inversion
  • Transitions

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene