Reliability Tests and Analysis of CMOS NOR Gates with Application of Nematic Liquid Crystal Failure Analysis Techniques,
Abstract
A reliability evaluation program covering 180 C/MOS devices from four vendors has been in progress at RADC for approximately two years. The date codes for these devices range from 1969 to 1973. The testing program included storage temperature, thermal shock, moisture resistance w/bias, temperature cycling w/bias, and bias power and temperature step stress (BPATSS). The results are presented detailing the predominant failure modes and mechanisms which were induced by this stress testing program. A concurrent investigation of nematic liquid crystal techniques for failure analysis of dielectric defects in MOS structures is included as an appendix to this C/MOS reliability report.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1976
- Accession Number
- ADA028519
Entities
People
- Carmine J. Salvo
- Daniel J. Burns
- Edgar A. Doyle Jr.
- Vincent C. Kapfer
Organizations
- Rome Laboratory