Dose Rate Effects on Radiation Damage of GaAs Using Electroreflectance.
Abstract
Radiation damage profiles for room temperature implanted gallium arsenide (GaAs) were obtained using electroreflectance. The effect of dose rate on radiation damage was examined for oxygen, argon, zinc, cadmium, xenon, magnesium, neon and nitrogen implanted GaAs. This dose rate dependence was explained by various annealing effects. Radiation damage profiles for diatomic oxygen and nitrogen implanted GaAs were obtained and interpreted. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1976
- Accession Number
- ADA029012
Entities
People
- Wayne A. Hanson
Organizations
- Air Force Institute of Technology