Development of Failure-Rate Models for Semiconductor Optoelectronic Devices.
Abstract
This report describes an effort to establish prediction techniques for the catastrophic failure rate and for the degradation exhibited by optoelectronic devices such as light-emitting diodes (LEDs) alphanumeric displays and opto-couplers. The proposed estimation procedures and equations have been developed in a format which is compatible with MIL-HDBK-217B, and Chapters 2 and 4 of this report might be considered for inclusion in an updated version of the handbook. The failure-rate equations are similar to those for germanium diodes in MIL-HDBK-217B, modified to be compatible with all available life-test data on optoelectronic devices. The degradation equations for which no analogy exists in other solid-state devices were formulated from theoretical considerations and matched to available degradation test data. The prediction techniques cover all presently known optoelectronic devices and are expected to remain valid even though the numerical values for the parameters will change as technology matures and more test data are generated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1976
- Accession Number
- ADA029163
Entities
People
- Donald B. Ellingham Jr.
- William M. Schreyer
- Wolfgang W. Gaertner