Total Dose Effects on Surface State Density, Carrier Concentration and Mobility in MOS Layers.
Abstract
Measurements are reported in which the induced carrier concentration and hall mobility of p-channel MOS structures are determined as a function of surface potential by Hall effect measurements at two different temperatures. The ratio of the Hall mobility to conductivity mobility was also determined. The density of interface states within 6 kT of the conduction band edge were calculated. The density of these states generally decrased with ionizing radiation dose and the channel carrier mobility was found to decrease with irradiation at low surface potentials. At high surface potentials, channel carrier mobility was relatively insensitive to ionizing radiation. Carrier scattering mechanisms within the conducting channel are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1976
- Accession Number
- ADA029215
Entities
People
- Harold D. Southward
- Jan E. Whitefield
- Roe J. Maier
Organizations
- Air Force Research Laboratory