Diffusion Dans Les Semiconducteurs du Groupe IV (Diffusion in Semiconductors of Group IV),

Abstract

The quantities which theoretically and experimentally characterize diffusion are briefly reviewed and discussed. Emphasis is placed on the difficulties in reconciling theory and experiment; in particular it is noted that self-diffusion in silicon is still a matter of controversy. The different aspects of charge state effects on diffusion are discussed in detail. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1976
Accession Number
ADA029319

Entities

People

  • J. Bourgoin
  • J. W. Corbett

Organizations

  • State University of New York at Albany

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Diffusion
  • Electronics
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Semiconductors
  • Solid State Electronics

Readers

  • Materials Science and Engineering.
  • Small Business Innovation Research Program (SBIR) EDI Research and Innovation.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics