Technology and Physics of Infrared and Point Contact Diodes

Abstract

A tube and mirrors have been installed from the argon and dye laser room to the diode testing area. Additional lead on aluminum diodes were evaluated at liquid helium temperature. An oxidation study was conducted on nickel which demonstrated that 400 square micrometer junctions from 100 ohms through 1 megohm can be made. Real time V-band and 337 micrometer holographic receptors have been designed and masks are being fabricated. Measurements are in progress on MOM (tungsten on nickel) point contact diodes to evaluate their effective antenna resistance as a function of length. The effective diode resistant is varied by changing whisker pressure and response is maximized with respect to whisker orientation in the focused laser beam.

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Document Details

Document Type
Technical Report
Publication Date
Jun 09, 1976
Accession Number
ADA029451

Entities

People

  • Ali Javan

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors
  • Space

DTIC Thesaurus Topics

  • Aluminum
  • Dye Lasers
  • Elements
  • Frequency
  • Laser Beams
  • Lasers
  • Liquid Dye Lasers
  • Low Temperature
  • Measurement
  • Metals
  • Oxidation
  • Power Levels
  • Radiation
  • Resistance
  • Resonance
  • Tungsten
  • V Band

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Optical Physics and Photonics.
  • Reinforced Composite Materials

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers