The Application of Test Structures and Test Patterns to the Development of Radiation Hardened Integrated Circuits: A Review.
Abstract
Government sponsored research and development on semiconductor devices intended for application in radiation environments often relies on test structures arranged into test patterns for device design information and process characterization. Problems unique to a radiation environment are often analyzed using test structures such as MOS capacitors and break-out transistors. The work reviewed in this report demonstrates the importance of test structures in isolating and identifying problem areas. However, the measurement methodology associated with test structures is seldom reported which makes it difficult to compare the results of different workers. Also, the work reported to date using test structures and test patterns for assessing radiation effects has involved the relatively slow-speed laboratory testing of statistically insignificant numbers of test structures. Test patterns could be used by buyers of radiation hardened devices for (1) vendor selection and qualification, (2) process validation for hardness screening and hardness assurance, and (3) identification of circuit parameters critical to hardness assurance.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1976
- Accession Number
- ADA029976
Entities
People
- K. F. Galloway
- M. G. Buehler
Organizations
- National Institute of Standards and Technology