Ion Implantation in Cadmium Telluride.
Abstract
Results of investigations conducted on cadmium telluride (CdTe) samples are presented in this two-part document. Part 1 describes the effects of ion implantation doping in CdTe using transmission electron microscopy (TEM) and electrical evaluation as investigative tools. Part 2 describes the investigation of microstructural defects in CdTe and interfacial reactions at the Pt/CdTe contact and subsequent correlations with electrical measurements on CdTe room-temperature gamma ray detectors, and possible solar cell uses. This study has shown that the previous experimental data obtained on arsenic and krypton-implanted samples can be explained by the radiation-induced formation of electrically active defects rather than by substitutional impurity doping. A model has been proposed entailing the liberation of cadmium vacancy acceptors from radiation-induced loops. Using column I dopants (potassium, sodium, and cesium) to fill available cadmium cacancy sites, high doping efficiencies and true chemical doping have been obtained in ion-implanted CdTe. Investigations of CdTe radiation detector materials have shown a direct correlation between defect content, excess leakage currents and polarization on fabricated devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1976
- Accession Number
- ADA030153
Entities
People
- J. Bean
- Jing Peng
- Jonathan Gibbons
- R. A. Armistead
- T. J. Magee
Organizations
- SRI International