Study of the Electronic Surface State of III - V Compounds

Abstract

Contents: Summary; Overview; Synchrotron Radiation Studies of Electronic Structure and Surface Chemistry of GaAs, GaSb, and InP--Core Shifts on Oxygen Exposure, Effect of O2 and Cs on Fermi Level Pinning of GaSb, Electronic Structure of the (110) GaAs Surface, Partial Yield Studies; Determination of the Oxygen Binding Site on GaAs (110) Using Soft X-Ray Photoemission Spectroscopy; Photoemission Studies of Surface States and Schottky Barrier Formation on InP.

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Document Details

Document Type
Technical Report
Publication Date
Mar 15, 1976
Accession Number
ADA030225

Entities

People

  • William E. Spicer

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Adsorption
  • Band Gaps
  • Chemistry
  • Compound Semiconductors
  • Covalent Bonds
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Linear Accelerators
  • Measurement
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Surface Chemistry
  • Surface Properties

Fields of Study

  • Materials science

Readers

  • Combustion science or combustion engineering.
  • Nanofabrication and Microfabrication.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics