Proceedings of the Special Meeting on the Physics of Detectors Held at U.S. Naval Training Device Center, Orlando, Florida, on 15 March 1972

Abstract

Contents: Recent 1/f noise studies; Radiation effects in semiconductors used as infrared detector materials; Basic device properties in the lead chalcogenides; Structural, chemical and photoelectronic properties of lead sulfide films; Optical measurements on PbSnTe; Auger spectrometer surface studies of InSb after detector fabrication procedures; Results of a study of the interaction between lithium and several deep acceptor impurities in germanium; Recombination cross-section for holes in Ge:Hg and electrons in n-type Si; PLZT and SBN pyroelectric detectors; Polymeric pyroelectric detectors; Improved IRQC performance of CdF2:Er(3+) by generation of C2v and C3v local site symmetry; Detection uncertainty; Preparation of (Hg,Cd)Te by a new high pressure furnace technique.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1972
Accession Number
ADA030278

Entities

Organizations

  • Environmental Research Institute of Michigan

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Analyzers
  • Band Gaps
  • Charge Carriers
  • Chemistry
  • Crystal Lattices
  • Crystal Structure
  • Detection
  • Detectors
  • Electrical Properties
  • Electromagnetic Fields
  • Electronics Industry
  • Energy Bands
  • Energy Gaps
  • Materials Processing
  • Scattering
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Academic Conference Management
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene