Study of the Electronic Surface State of 3 - 5 Compounds

Abstract

A model for the surface state distribution on the clean (110) face of GaAs, InP, and GaSb has been established. Any filled surface states lie well below the valence band maximum (VBM) for all three materials. There is an empty surface state band with a lower edge 0.7 eV below the conduction band minimum (CBM) in GaAs, and 0.25 eV below the CBM for InP. There are no empty (or filled) surface states within the bandgap for GaSb. As will be seen later, this profoundly affects the behavior of GaSb when Cs is added to the surface. For all three materials the empty states are associated with the column III surface atoms, and the filled surface states are associated with the column V surface atoms. This model can probably be generalized to other III-V semiconductors and to faces other than the (110) face.

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Document Details

Document Type
Technical Report
Publication Date
Sep 15, 1975
Accession Number
ADA030575

Entities

People

  • William E. Spicer

Organizations

  • Stanford University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Adsorption
  • Band Gaps
  • Band Structures
  • Chemistry
  • Compound Semiconductors
  • Conduction Bands
  • Electronics Laboratories
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Materials
  • Materials Science
  • Measurement
  • Oxide Films
  • Semiconductors
  • Solid State Physics
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics