Investigation of Defects and Impurities in Silicon-on-Sapphire

Abstract

This report covers the second six months of a program to investigate the effects of defects and impurities in SOS materials on the electrical characteristics and radiation tolerance of CMOS/SOS devices. Additional chemical surface-etch experiments and IMMA analyses were completed during this phase of the program. This phase of the study focused on fabricating CMOS/SOS devices on the various substrate groupings examined in the first phase of this study. Electrical parameter data and radiation hardness data were obtained for the CMOS/SOS devices and correlated with SOS material characteristics.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1976
Accession Number
ADA030777

Entities

People

  • John L. Peel
  • Michael D. Barry

Tags

DTIC Thesaurus Topics

  • Crystal Structure
  • Electron Microscopes
  • Environmental Pollutants
  • Fabrication
  • Failure Mode And Effect Analysis
  • Films
  • Impurities
  • Ion Beams
  • Ionizing Radiation
  • Materials
  • Metals
  • Neutron Activation
  • Radiation
  • Scanning Electron Microscopes
  • Standards
  • Substrates
  • X Rays

Readers

  • Business Analytics
  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.