Assessment of Solid State Replacement of TWT Amplifiers for Satellite Communications

Abstract

This report summarizes the present state-of-the-art achievements of GaAs FET transistors, assesses their probable capabilities and the associated technology problems. Designs of FET high power amplifiers are included and it is noted that measured intermodulation distortion in these amplifiers is higher than anticipated. Finally it is shown that efficient high power GaAs Read diodes of the hard punch-on variety can satisfy the TWTA distortion specifications. Thus an FET/Read diode hybrid amplifier is proposed that should meet all specifications except that of overall efficiency which would probably be reduced to 20-25%.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1976
Accession Number
ADA030797

Entities

People

  • Charles A. Lee
  • G. Conrad Dalman
  • J. Frey
  • Lester F. Eastman
  • W. Ku

Organizations

  • Cornell University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bandwidth
  • Circuit Analysis
  • Electronics
  • Electronics Laboratories
  • Epitaxial Growth
  • Field Effect Transistors
  • Frequency
  • Frequency Bands
  • Modulation
  • Plastic Explosives
  • Power Amplifiers
  • Power Electronics
  • Power Levels
  • Push Pull Amplifiers
  • Semiconductors
  • Standards
  • Transistors

Readers

  • Electronics Engineering
  • Software Engineering

Technology Areas

  • Space