Research on Gunn Effect Materials (III-V Compounds)

Abstract

Several novel preparation techniques are reported to prepare high purity semi-insulating GaAs single crystals having minimum impurity doping. The growth techniques for InP single crystals are reported. A new method to prepare epitaxial GaAs on in-situ cleaned substrates is presented.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1976
Accession Number
ADA030864

Entities

People

  • E. Swiggard
  • H. Lessoff

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Alcohols
  • Ceramic Materials
  • Compound Semiconductors
  • Crystal Growth
  • Crystal Structure
  • Crystals
  • Electronics
  • Electronics Laboratories
  • Epitaxial Growth
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Mass Spectrometry
  • Mass Spectroscopy
  • Measurement
  • Single Crystals
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene