Permanent and Transient Radiation Effects on Thin-Oxide (200-A) MOS Transistors

Abstract

An approach for hardening metal oxide semiconductor (MOS) transistors to ionizing radiation by reducing the thickness of the gate oxide is presented. It is shown that Si gate, n-channel MOS field-effect transistors with oxides 200 A thick continue to operate in the enhancement mode after irradiation to 1,000, 000 rads (Si) with a positive bias applied to the gate during the irradiation. This represents a considerable improvement over conventional thick-oxide (approximately 1000-A) devices, which go into the depletion mode of operation at 100,000 rads (Si). The thin-oxide devices after exposure to pulsed ionizing radiation showed improved performance over that of thick-oxide devices. It was found also that device operation following irradiation depended on the source- drain spacing (Channel length): Shortening the channel length leads to an increased shift of the threshold voltage induced by irradiation.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1976
Accession Number
ADA030968

Entities

People

  • Robert A. Martin
  • Stewart Share

Organizations

  • Harry Diamond Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Dielectric Permittivity
  • Dose Rate
  • Electron Holes
  • Energy
  • Fabrication
  • Field Effect Transistors
  • Gamma Rays
  • Hardening
  • Ionizing Radiation
  • Linear Accelerators
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Radiation
  • Radiation Effects
  • Radiation Hardening
  • Semiconductors
  • Square Roots

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space
  • Space - Hall-Effect Thruster