Preparation and Properties of Thin Film GaxIn(1-x)As and GaAsxSb(1-x) Alloy Films

Abstract

Epitaxial alloy films were grown from solutions using three versions of the growth reactor. An effort was made to closely monitor the reducing quality of the H2 atmosphere in the reactor. Failure to grow suitably thin films is attributed to the inadequate quality of this atmosphere.

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Document Details

Document Type
Technical Report
Publication Date
Jul 10, 1976
Accession Number
ADA031086

Entities

People

  • James M. Whelan

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Cells
  • Electrical Conductivity
  • Energy
  • Epitaxial Growth
  • Failure Mode And Effect Analysis
  • Films
  • Flow Rate
  • Fluids
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Liquids
  • Phase
  • Quality
  • Silicon Carbide
  • Thin Films
  • Vapor Phases
  • Water Vapor

Readers

  • Computational Modeling and Simulation
  • Thin Film Deposition Science.