Study of Electronic Transport and Trapping in Technologically Important Insulators.
Abstract
Studies of electron trapping in unannealed aluminum-implanted silicon-dioxide films show large concentrations of electron traps not present in control samples. A substantial fraction of the traps appear to be associated with displacement damage created by the implantation. A study of electron-beam-induced conduction in thermally grown silicon dioxide indicates that substantial concentrations of electron traps are generated through the oxide by bombardment with a nonpenetrating electron beam. This conclusion has been confirmed by investigation of the electron-trapping properties of oxides that had previously been subjected to nonpenetrating electron bombardment. A study of lateral nonuniformities and interface states in MIS structures has led to the development of three new methods for distinguishing between these two effects and to a new and simple method for determining the distribution of flatband voltages in a nonuniform MIS capacitor. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1976
- Accession Number
- ADA031332
Entities
People
- Walter C. Johnson
Organizations
- Princeton University