Infrared Response of Impurity Doped Silicon MOSFET's (IRFET's): Fabrication and Characterization of the Gallium Doped Infrared Sensing MOSFET
Abstract
Fabrication and characterization of the gallium doped infrared sensing MOSFET is described. Gallium doped MOSFET device structures have been fabricated by diffusion of gallium from doped oxide sources into n-channel MOSFET's fabricated on a normal boron p-type substrates. The process developed produces double doped, both gallium and boron substrates. The characteristics of the gallium impurity center in silicon have been determined by measurements on the MOSFET device structure, and specifically the thermal emission rate of holes from neutral gallium centers determined. To the best of the author's knowledge the emission rate of gallium has not been previously measured. A very significant field enhancement has been observed in this thermal emission rate and is described by the Poole-Frenkel effect. Measurements have been made of the characteristics of the gallium doped MOSFET (IRFET) as an infrared detector. It has been found that the device operated according to previously published models and design criteria and in a manner consistent with that previously observed for the indium and gold doped devices. These results demonstrate that the gallium doped infrared sensing MOSFET (IRFET) will operate in the far infrared, * to 14 micrometer wavelength range, and as such might be particularly suited to large scale integrated infrared imaging arrays and applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1976
- Accession Number
- ADA031425
Entities
People
- Leonard Forbes
Organizations
- University of Arkansas