Radiation and Charge Injection in Al2O3 using New Techniques.

Abstract

Radiation-induced currents in pyrolytic Al2O3 films have been measured using strongly absorbed vacuum UV radiation. These currents show a behavior similar to that observed in SiO2 films; namely, there is a photocurrent component and a dark-current component which result after the trapping of holes in the oxide enhances tunnel injection of electrons from the silicon electrode. The radiation-induced electron injection is observed with smaller applied fields because of the trap-assisted tunneling mechanism known to be active in Al2O3. Interpretation of the results is complicated by the presence of both electron and hole traps. Nevertheless, two limiting models are proposed to provide a qualitative explanation. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 17, 1975
Accession Number
ADA031476

Entities

People

  • Richard J. Powell

Organizations

  • RCA Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Aluminum Oxides
  • Conduction Bands
  • Crystal Structure
  • Drug Abuse
  • Efficiency
  • Electromagnetic Radiation
  • Electron Emission
  • Electrons
  • Energy Bands
  • Measurement
  • Oxide Films
  • Quantum Efficiency
  • Radiation
  • Space Charge
  • Ultraviolet Radiation
  • United States

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Spectroscopy.

Technology Areas

  • Microelectronics