Electron Temperature Dependence of Dissociative Recombination in Xenon

Abstract

The three-mode microwave afterglow apparatus was used in conjunction with a high-speed grating spectrometer to study the variation with electron temperature of the recombination coefficient alpha(Xe2(+)) and of the Xe* excited states produced by dissociative recombination over the range 300 K < or = 8000 K.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1976
Accession Number
ADA031576

Entities

People

  • Dwight P. Sipler
  • Manfred A. Biondi
  • Yueh-jaw Shiu

Organizations

  • University of Pittsburgh

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Afterglows
  • Coefficients
  • Diffusion Coefficient
  • Electron Density
  • Electron Energy
  • Electrons
  • Energy
  • Energy Levels
  • Frequency
  • Frequency Shift
  • Ground State
  • Intensity
  • Kinetic Energy
  • Measurement
  • Microwaves
  • Quantum Numbers
  • Radiation

Fields of Study

  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Optical Physics and Photonics.

Technology Areas

  • Microelectronics