Techniques for Making Gap-Coupled Acoustoelectric Devices.
Abstract
The techniques recently developed for fabricating, inspecting, assembling and packaging silicon-on-LiNbO3 acoustoelectric devices, such as amplifiers, convolvers and memory correlators, will be presented. This will include: description of the lithographic and ion beam etching techniques employed in making the spacer posts, demonstration of the techniques used for eliminating dust and achieving uniform gaps, inspection methods, and several examples of packages. Experience to date indicates that the techniques for making gap-coupled structures are reliable, and lend themselves to widespread application. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 22, 1975
- Accession Number
- ADA031719
Entities
People
- Henry I. Smith
Organizations
- Massachusetts Institute of Technology