Gallium Diffusion in Silicon Dioxide. Rutherford Backscattering Analysis of Thin Films.

Abstract

The behavior of Ga in sputtered SiO2 films is examined with the result that diffusion is observed during annealing at 850 C. The accumulated evidence indicates that SiO2 is not an effective film to use on a GaP or GaAs for protection against Ga loss during high temperature anneals. The method employed to make the measurements, Rutherford backscattering (RBS) analysis of SiO2:Ga:SiO2 sandwiches, is demonstrated to be effective and applicable to other systems. The value of RBS as a general tool for thin film analysis is demonstrated by measuring the thicknesses and compositions of several types of films as well as the concentrations and locations of impurities. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1976
Accession Number
ADA031740

Entities

People

  • Patrick M. Hemenger

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accuracy
  • Air Force
  • Ceramic Materials
  • Detectors
  • Dielectrics
  • Electrical Properties
  • Ion Implantation
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Measurement
  • New York
  • Oxide Films
  • Oxides
  • Semiconductors
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene