Reliability Evaluation of Schottky Barrier Diode Microcircuits.
Abstract
The objective of this study has been the analysis and reliability evaluation of modern Schottky Barrier Diode clamped microcircuits for use in high speed digital applications. The selected devices included SSI and MSI integration, single layer metallization, in both the regular and low power versions from two major vendors. All devices in the study utilized a trimetal system consisting of pure aluminum as the main conductor, titanium-tungsten as a barrier metal, and platinum-silicide for the Schottky and ohmic contacts. All devices were subjected to long term high temperature storage and high temperature static operation to establish activation energies and to calculate failure rates at maximum operating temperature ranges. The low power Schottky 54LS00 from both Vendors A and B were additionally subjected to dynamic long term accelerated testing for comparison purposes. Detail construction analysis and electrical characterization, including thermal resistances, were performed on all device types. Units which failed during the performance of life testing were electrically categorized and physically analyzed to establish failure modes and mechanisms. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1976
- Accession Number
- ADA032001
Entities
People
- A. A. Capobianco
- D. Bartels
- E. T. Lewis
Organizations
- Raytheon Missiles & Defense